BUK9Y6R0-60E概述
NXP BUK9Y6R0-60E 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
The is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
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- Repetitive avalanche rated
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- Suitable for thermally demanding environments due to 175°C rating
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- True logic level gate with VGS th rating of greater than 0.5V at 175°C
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- -55 to 175°C Junction temperature range
BUK9Y6R0-60E中文资料参数规格
技术参数
针脚数 8
漏源极电阻 0.004 Ω
极性 N-Channel
耗散功率 195 W
阈值电压 1.7 V
漏源极电压Vds 60 V
连续漏极电流Ids 100A
工作温度Max 175 ℃
封装参数
引脚数 8
封装 SOT-669
外形尺寸
封装 SOT-669
其他
产品生命周期 Unknown
制造应用 Automation & Process Control, Lighting, Automotive, Power Management, Motor Drive & Control, Industrial
符合标准
RoHS标准 Exempt
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
在线购买BUK9Y6R0-60E
型号： BUK9Y6R0-60E
制造商：
NXP
恩智浦
描述：NXP BUK9Y6R0-60E 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V