INFINEON BSC047N08NS3 G 晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
The is a 80V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. The OptiMOS™ MOSFET offers industry"s lowest RDS on within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
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- Dual sided cooling
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- Low parasitic inductance
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- Low profile <0.7mm
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- Reduced switching and conduction losses
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- Very low on-resistance RDSon
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- Superior thermal resistance
针脚数 8
漏源极电阻 0.0039 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 2.8 V
漏源极电压Vds 80 V
上升时间 17 ns
输入电容Ciss 4800pF @40VVds
额定功率Max 125 W
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TSDSON
长度 5.9 mm
宽度 5.15 mm
高度 1.27 mm
封装 PG-TSDSON
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 替代能源, Power Management, 消费电子产品, 发光二极管照明, 计算机和计算机周边, 通信与网络, Consumer Electronics, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control, Communications & Networking, 电机驱动与控制, LED Lighting, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99