BUK9615-100E概述
NXP BUK9615-100E 晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V
The is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
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- Repetitive avalanche rated
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- Suitable for thermally demanding environments due to 175°C rating
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- True logic level gate with VGS th rating of greater than 0.5V at 175°C
BUK9615-100E中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.0125 Ω
极性 N-Channel
耗散功率 182 W
阈值电压 1.7 V
漏源极电压Vds 100 V
连续漏极电流Ids 66A
工作温度Max 175 ℃
封装参数
引脚数 3
封装 TO-263
外形尺寸
封装 TO-263
其他
产品生命周期 Unknown
制造应用 Automotive, Industrial, Motor Drive & Control, Automation & Process Control, Lighting, Power Management
符合标准
RoHS标准 Non-Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
在线购买BUK9615-100E
型号： BUK9615-100E
制造商：
NXP
恩智浦
描述：NXP BUK9615-100E 晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V