BUK961R4-30E概述
D2PAK N-CH 30V 120A
The is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
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- Repetitive avalanche rated
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- Suitable for thermally demanding environments due to 175°C rating
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- True logic level gate with VGS th rating of greater than 0.5V at 175°C
BUK961R4-30E中文资料参数规格
技术参数
漏源极电阻 0.001 Ω
极性 N-Channel
耗散功率 357 W
阈值电压 1.7 V
漏源极电压Vds 30 V
连续漏极电流Ids 120A
工作温度Max 175 ℃
工作温度Min -55 ℃
封装参数
引脚数 3
封装 TO-263
外形尺寸
封装 TO-263
物理参数
工作温度 -55℃ ~ 175℃
其他
产品生命周期 Unknown
制造应用 Automation & Process Control, Lighting, Automotive, Power Management, Motor Drive & Control, Industrial
符合标准
RoHS标准 Exempt
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
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