BUZ906

SEMELAB  BUZ906  晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V

The is a -200V P-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications.

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High energy rating

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60ns Turn-off time

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120ns Turn-on time

Newark:
MOSFET Transistor, P Channel, -8 A, -200 V, 1.5 ohm, -1.5 V