INFINEON BSC160N10NS3 G 晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V
Summary of Features:
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- Excellent switching performance
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- World’s lowest R DSon
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- Very low Q g and Q gd
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- Excellent gate charge x R DSon product FOM
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- RoHS compliant-halogen free
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- MSL1 rated 2
Benefits:
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- Environmentally friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy-to-design products
针脚数 8
漏源极电阻 0.0139 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 2.7 V
漏源极电压Vds 100 V
上升时间 15 ns
输入电容Ciss 1700pF @50VVds
额定功率Max 60 W
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60000 mW
安装方式 Surface Mount
引脚数 8
封装 TDSON-8
长度 5.9 mm
宽度 5.15 mm
高度 1.27 mm
封装 TDSON-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Class D audio amplifiers, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems, Uninterruptable power supplies UPS, Or-ing switches and circuit breakers in 48V systems
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSC160N10NS3 G Infineon 英飞凌 | 当前型号 | 当前型号 |
FDMS3662 飞兆/仙童 | 功能相似 | BSC160N10NS3 G和FDMS3662的区别 |