BFG135

NXP  BFG135  晶体管 双极-射频, NPN, 15 V, 7 GHz, 1 W, 150 mA, 130 hFE

The is a 7GHz NPN Silicon Planar Epitaxial Transistor intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile.

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175°C Junction temperature