NXP BCP54,115 单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE
Semiconductors has the solution to your circuit"s high-voltage requirements with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1350 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 180 MHz
针脚数 4
极性 NPN
耗散功率 650 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 1A
最小电流放大倍数hFE 63 @150mA, 2V
额定功率Max 960 mW
直流电流增益hFE 63
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1350 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.7 mm
封装 TO-261-4
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BCP54,115 NXP 恩智浦 | 当前型号 | 当前型号 |
BCP54-10,135 恩智浦 | 类似代替 | BCP54,115和BCP54-10,135的区别 |
BCP54,135 恩智浦 | 类似代替 | BCP54,115和BCP54,135的区别 |
BCP54 飞兆/仙童 | 功能相似 | BCP54,115和BCP54的区别 |