BSZ088N03LS G

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BSZ088N03LS G概述

P沟道 30V 50A

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

.
Ultra low gate and output charge
.
Lowest on-state resistance in small footprint packages
.
Easy to design in

Benefits:

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Increased battery lifetime
.
Improved EMI behavior making external snubber networks obsolete
.
Saving costs
.
Saving space
.
Reducing power losses
BSZ088N03LS G中文资料参数规格
技术参数

极性 N-Channel

耗散功率 2100 mW

漏源极电压Vds 30 V

上升时间 2.8 ns

输入电容Ciss 1700pF @15VVds

额定功率Max 35 W

下降时间 2.6 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 8

封装 PowerTDFN-8

外形尺寸

长度 3.3 mm

高度 1.10 mm

封装 PowerTDFN-8

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Onboard charger, VRD/VRM, Mainboard

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

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型号: BSZ088N03LS G
描述:P沟道 30V 50A

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