BS62LV256TIP55

BS62LV256TIP55图片1
BS62LV256TIP55图片2
BS62LV256TIP55概述

SRAM 256K, 32KX8, 2.4-5.5V, TSOP28; Memory Size: 256Kbit; Memory Configuration: 32K x 8Bit; Access Time: 55ns; Supply...

DESCRIPTION

TheBS62L V256 is a high performance,very low power CMOS Static Random  Access  Memory  organized  as  32,768  by  8  bits  and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current  of  0.01uA  and  maximum  access  time  of  70ns  in  3.0V operation.

FEATURES

Wide VCC operation voltage : 2.4V ~ 5.5V

Very low powerconsumption:

    VCC = 3.0V  Operationcurrent :  25mA Max.  at 70ns

                                               1mA Max.  at 1MHz

                     Standby current :  0.01uATyp. at 25OC

   VCC = 5.0V  Operationcurrent :  40mA Max.  at 55ns

                                              2mA Max.  at 1MHz

                     Standby current :  0.4uA Typ.  at 25OC

Highspeed access time:

  -55  55nsMax. at VCC: 4.5~5.5V

  -70  70nsMax. at VCC: 3.0~5.5V

Automatic power down whenchip is deselected

Easy expansion with CE and OE options

Threestate outputs and TTLcompatible

Fully static operation

Data retentionsupply voltage as low as 1.5V

BS62LV256TIP55中文资料参数规格
技术参数

存取时间 55 ns

内存容量 32000 B

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 2.4V ~ 5.5V

电源电压Max 5.5 V

电源电压Min 2.4 V

封装参数

安装方式 Surface Mount

引脚数 28

封装 TSOP

外形尺寸

封装 TSOP

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Obsolete

包装方式 Each

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买BS62LV256TIP55
型号: BS62LV256TIP55
制造商: BSI
描述:SRAM 256K, 32KX8, 2.4-5.5V, TSOP28; Memory Size: 256Kbit; Memory Configuration: 32K x 8Bit; Access Time: 55ns; Supply...
替代型号BS62LV256TIP55
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