Trans RF MOSFET N-CH 12V 0.03A 4Pin3+Tab SOT-143B T/R
The is a dual gate N-channel MOSFET encapsulated in a plastic micro-miniature package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. It is designed for use with VHF and UHF applications with 12V supply voltage, such as television tuners and professional communications equipment.
频率 200 MHz
额定电流 30 mA
极性 N-Channel
耗散功率 200 mW
漏源极电压Vds 12 V
连续漏极电流Ids 30.0 mA
测试电流 10 mA
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 200 mW
额定电压 12 V
引脚数 4
封装 TO-253-4
高度 1 mm
封装 TO-253-4
材质 Silicon
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 Industrial, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BF998,215 NXP 恩智浦 | 当前型号 | 当前型号 |
BF998 恩智浦 | 完全替代 | BF998,215和BF998的区别 |
BF992,215 恩智浦 | 类似代替 | BF998,215和BF992,215的区别 |
BF991,215 恩智浦 | 类似代替 | BF998,215和BF991,215的区别 |