BF998,215

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BF998,215概述

Trans RF MOSFET N-CH 12V 0.03A 4Pin3+Tab SOT-143B T/R

The is a dual gate N-channel MOSFET encapsulated in a plastic micro-miniature package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. It is designed for use with VHF and UHF applications with 12V supply voltage, such as television tuners and professional communications equipment.

BF998,215中文资料参数规格
技术参数

频率 200 MHz

额定电流 30 mA

极性 N-Channel

耗散功率 200 mW

漏源极电压Vds 12 V

连续漏极电流Ids 30.0 mA

测试电流 10 mA

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 200 mW

额定电压 12 V

封装参数

引脚数 4

封装 TO-253-4

外形尺寸

高度 1 mm

封装 TO-253-4

物理参数

材质 Silicon

其他

产品生命周期 Obsolete

包装方式 Tape & Reel TR

制造应用 Industrial, Communications & Networking, Power Management

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BF998,215
型号: BF998,215
制造商: NXP 恩智浦
描述:Trans RF MOSFET N-CH 12V 0.03A 4Pin3+Tab SOT-143B T/R
替代型号BF998,215
型号/品牌 代替类型 替代型号对比

BF998,215

NXP 恩智浦

当前型号

当前型号

BF998

恩智浦

完全替代

BF998,215和BF998的区别

BF992,215

恩智浦

类似代替

BF998,215和BF992,215的区别

BF991,215

恩智浦

类似代替

BF998,215和BF991,215的区别

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