VISHAY BPW17N 光电三极管,T3/4
825nm 顶视图 径向
得捷:
PHOTOTRANSISTOR 450 TO 1040 NM
欧时:
### BPW17N Series PhototransistorsThe BPW17N series, from Vishay Semiconductor, are silicon NPN phototransistors which are sensitive to visible and near IR light. They come in standard through-hole 1.8mm T-3/4 packages. The BPW17N phototransistors have a clear plastic lens with a flat top. Detectors in electronic control and drive circuits are ideal applications for the BPW17N phototransistors. Features of the BPW17N phototransistors: 1.8mm T-3/4 package Through-hole mounting High photo sensitivity High radiant sensitivity Fast response times ### 红外光电晶体管,Vishay Semiconductor
贸泽:
Phototransistors NPN Phototransistor 32V 100mW 825nm
艾睿:
Phototransistor Chip Silicon 825nm 2-Pin T-3/4
安富利:
Phototransistor Chip Silicon 825nm 2-Pin T-3/4
富昌:
825 nm ±12° 灵敏度 32 V 50 mA 通孔 NPN 光电晶体管 - T-3/4
Chip1Stop:
Phototransistor Chip Silicon 825nm 2-Pin T-3/4
TME:
Phototransistor; transparent; 24°; λp max:825nm; 32V; THT; 1mA
Verical:
Phototransistor Chip Silicon 825nm 2-Pin T-3/4
Newark:
# VISHAY BPW17N Phototransistor, 825 nm, 12 °, 100 mW, 2 Pins, T-3/4 1.8mm
儒卓力:
**PHOTOTRANSISTOR 1,8MM **
AMEYA360:
Vishay BPW17N, 24 ° 红外+可见光 光电晶体管, 通孔安装 1.8/2.4mm 封装
额定电流 50.0 mA
上升/下降时间 4.8 ns
通道数 1
针脚数 2
波长 825 nm
视角 12°
峰值波长 825 nm
极性 NPN
耗散功率 100 mW
功耗 100 mW
上升时间 4.8 µs
击穿电压集电极-发射极 32 V
额定功率Max 100 mW
下降时间 5 µs
工作温度Max 100 ℃
工作温度Min -40 ℃
耗散功率Max 100 mW
安装方式 Through Hole
引脚数 2
封装 T-3
长度 3.3 mm
宽度 2.4 mm
高度 2.9 mm
封装 T-3
材质 Silicon
工作温度 -40℃ ~ 100℃ TA
产品生命周期 Active
包装方式 Bulk
制造应用 传感与仪器, Sensing & Instrumentation
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99