Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ12DN20NS3GATMA1, 11.3 A, Vds=200 V, 8引脚 TSDSON封装
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 200V 11.3A 8TSDSON
立创商城:
N沟道 200V 11.3A
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ12DN20NS3GATMA1, 11.3 A, Vds=200 V, 8引脚 TSDSON封装
e络盟:
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSZ12DN20NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R
Chip1Stop:
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP
TME:
Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Verical:
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
额定功率 50 W
针脚数 8
漏源极电阻 0.108 Ω
极性 N-Channel
耗散功率 50 W
阈值电压 3 V
漏源极电压Vds 200 V
连续漏极电流Ids 11.3A
上升时间 4 ns
输入电容Ciss 510pF @100VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 50W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TSDSON-8
长度 3.4 mm
宽度 3.4 mm
高度 1.1 mm
封装 PG-TSDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Isolated DC-DC converters, Class D audio amplifiers, Synchronous rectification for AC-DC SMPS
RoHS标准
含铅标准 Lead Free