晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0015 ohm, 10 V, 2 V
Description:
With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.
Available in halfbridge configuration power stage 5x6
Benefits:
额定功率 69 W
针脚数 8
漏源极电阻 0.0015 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 2 V
漏源极电压Vds 25 V
漏源击穿电压 25 V
连续漏极电流Ids 29A
上升时间 4.4 ns
输入电容Ciss 2800pF @12VVds
下降时间 3.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 69W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
长度 5.9 mm
宽度 5.15 mm
高度 1.27 mm
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger, VRD/VRM, Mainboard
RoHS标准
含铅标准 Lead Free