BSC018NE2LSATMA1

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BSC018NE2LSATMA1概述

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0015 ohm, 10 V, 2 V

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

Available in halfbridge configuration power stage 5x6

 

Benefits:

.
Save overall system costs by reducing the number of phases in multiphase converters
.
Reduce power losses and increase efficiency for all load conditions
.
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
.
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in
BSC018NE2LSATMA1中文资料参数规格
技术参数

额定功率 69 W

针脚数 8

漏源极电阻 0.0015 Ω

极性 N-Channel

耗散功率 2.5 W

阈值电压 2 V

漏源极电压Vds 25 V

漏源击穿电压 25 V

连续漏极电流Ids 29A

上升时间 4.4 ns

输入电容Ciss 2800pF @12VVds

下降时间 3.6 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2.5W Ta, 69W Tc

封装参数

安装方式 Surface Mount

引脚数 8

封装 PG-TDSON-8

外形尺寸

长度 5.9 mm

宽度 5.15 mm

高度 1.27 mm

封装 PG-TDSON-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Onboard charger, VRD/VRM, Mainboard

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买BSC018NE2LSATMA1
型号: BSC018NE2LSATMA1
描述:晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0015 ohm, 10 V, 2 V

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