BSS192PH6327FTSA1

INFINEON  BSS192PH6327FTSA1  晶体管, MOSFET, P沟道, -190 mA, -250 V, 7.7 ohm, -10 V, -1.5 V

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET BSS192PH6327FTSA1, 190 mA, Vds=250 V, 3引脚 SOT-89封装

立创商城:
P沟道 250V 190mA

得捷:
MOSFET P-CH 250V 190MA SOT89

e络盟:
功率场效应管, MOSFET, P沟道, 250 V, 190 mA, 7.7 ohm, SOT-89, 表面安装

艾睿:
Create an effective common drain amplifier using this BSS192PH6327FTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology.

安富利:
Trans MOSFET P-CH -250V -0.19A 3-Pin SOT-89 T/R

Chip1Stop:
Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin3+Tab SOT-89 T/R

TME:
Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89

Verical:
Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin3+Tab SOT-89 T/R

Newark:
# INFINEON  BSS192PH6327FTSA1  MOSFET Transistor, P Channel, -190 mA, -250 V, 7.7 ohm, -10 V, -1.5 V

Win Source:
MOSFET P-CH 250V 0.19A SOT-89