INFINEON BSZ120P03NS3GATMA1 晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V 新
表面贴装型 P 通道 11A(Ta),40A(Tc) 2.1W(Ta),52W(Tc) PG-TSDSON-8
得捷:
MOSFET P-CH 30V 11A/40A 8TSDSON
欧时:
Infineon MOSFET BSZ120P03NS3GATMA1
e络盟:
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V
艾睿:
This BSZ120P03NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 52000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R
TME:
Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Verical:
Trans MOSFET P-CH 30V 11A 8-Pin TSDSON EP T/R
Newark:
MOSFET, P-CH, -30V, -40A, PG-TSDSON-8
Win Source:
MOSFET P-CH 30V 40A TSDSON-8
额定功率 52 W
针脚数 8
漏源极电阻 0.009 Ω
极性 P-Channel
耗散功率 52 W
输入电容 2240 pF
漏源极电压Vds 30 V
连续漏极电流Ids 40A
上升时间 11 ns
输入电容Ciss 3360pF @15VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.1W Ta, 52W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TSDSON-8
封装 PG-TSDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger
RoHS标准
含铅标准 Lead Free
REACH SVHC版本 2015/12/17