Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AH3045AATMA1, 21 A, Vds=200 V, 3引脚 D2PAK TO-263封装
SIPMOS® N 通道 MOSFET
得捷:
MOSFET N-CH 200V 21A D2PAK
欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AH3045AATMA1, 21 A, Vds=200 V, 3引脚 D2PAK TO-263封装
艾睿:
Make an effective common source amplifier using this BUZ30AH3045AATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 200V 21A 3-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO263-3
Verical:
Trans MOSFET N-CH 200V 21A 3-Pin2+Tab TO-263 T/R
Win Source:
MOSFET N-CH 200V 21A TO-263
额定功率 125 W
极性 N-CH
耗散功率 125 W
漏源极电压Vds 200 V
连续漏极电流Ids 21A
上升时间 70 ns
输入电容Ciss 1900pF @25VVds
额定功率Max 125 W
下降时间 90 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.31 mm
宽度 9.45 mm
高度 4.57 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Synchronous rectification for AC-DC SMPS, Class D audio amplifiers, Isolated DC-DC converters
RoHS标准
含铅标准 无铅