BSC265N10LSFGATMA1

INFINEON  BSC265N10LSFGATMA1  晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V 新

OptiMOS™2 功率 MOSFET 系列

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N-CH 100V 6.5A/40A TDSON

立创商城:
N沟道 100V 40A 6.5A

欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSC265N10LSFGATMA1, 40 A, Vds=100 V, 8引脚 PG-TDSON封装

e络盟:
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V

艾睿:
This BSC265N10LSFGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 78000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R

Chip1Stop:
Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 100V 6.5A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC265N10LSFGATMA1  MOSFET, N-CH, 100V, 40A, PG-TDSON-8 New