INFINEON BSC0911NDATMA1 双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
MOSFET - 阵列 2 N 沟道(双)非对称型 25V 18A,30A 1W 表面贴装型 PG-TISON-8
欧时:
Infineon MOSFET BSC0911ND
得捷:
MOSFET 2N-CH 25V 18A/30A TISON8
立创商城:
双N沟道配对 25V 18A 30A
贸泽:
MOSFET N-Ch 25V 40A TISON-8
e络盟:
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 900 µohm, 10 V, 1.6 V
艾睿:
As an alternative to traditional transistors, the BSC0911NDATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R
Chip1Stop:
Trans MOSFET N-CH 25V 22A/36A 8-Pin TISON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Verical:
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON EP T/R
Win Source:
MOSFET 2N-CH 25V 18A/30A TISON-8
额定功率 2.5 W
针脚数 8
极性 Dual N-Channel
耗散功率 2.5 W
阈值电压 1.6 V
漏源极电压Vds 25 V
连续漏极电流Ids 22A/36A
输入电容Ciss 1600pF @12VVds
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TISON-8
长度 5.9 mm
宽度 5.15 mm
高度 1.27 mm
封装 PG-TISON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 VRD/VRM, Mainboard, Onboard charger
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17