INFINEON BSC010N04LSATMA1 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
OptiMOS™5 功率 MOSFET
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET BSC010N04LSATMA1, 100 A, Vds=40 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 40V 38A/100A TDSON
贸泽:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
e络盟:
晶体管, MOSFET, N沟道, 100 A, 40 V, 850 µohm, 10 V, 2 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSC010N04LSATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
TME:
Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC010N04LSATMA1 MOSFET, N-CH, 40V, 100A, TDSON-8
额定功率 139 W
针脚数 8
极性 N-Channel
耗散功率 139 W
阈值电压 2 V
漏源极电压Vds 40 V
连续漏极电流Ids 100A
上升时间 12 ns
输入电容Ciss 6800pF @20VVds
额定功率Max 2.5 W
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 139W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
长度 6.1 mm
宽度 5.35 mm
高度 1.1 mm
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 工业, Industrial, 电机驱动与控制, Alternative Energy, Power Management, Alternative Energy, Motor Drive & Control, , Isolated DC-DC converters, 替代能源, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSC010N04LSATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSC014N04LSIATMA1 英飞凌 | 类似代替 | BSC010N04LSATMA1和BSC014N04LSIATMA1的区别 |
BSC010N04LSIATMA1 英飞凌 | 类似代替 | BSC010N04LSATMA1和BSC010N04LSIATMA1的区别 |
BSB014N04LX3GXUMA1 英飞凌 | 功能相似 | BSC010N04LSATMA1和BSB014N04LX3GXUMA1的区别 |