BSR58,215

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BSR58,215概述

JFET N-CH 40V 0.25W1/4W SOT23

This JFET from Semiconductors is specially engineered resist to control current flow as well as provide high input impedance. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

BSR58,215中文资料参数规格
技术参数

漏源极电阻 60 Ω

耗散功率 250 mW

漏源极电压Vds 40 V

击穿电压 40 V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BSR58,215
型号: BSR58,215
制造商: NXP 恩智浦
描述:JFET N-CH 40V 0.25W1/4W SOT23
替代型号BSR58,215
型号/品牌 代替类型 替代型号对比

BSR58,215

NXP 恩智浦

当前型号

当前型号

BSR56

飞兆/仙童

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BSR58,215和BSR56的区别

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BSR58

安森美

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BSR58,215和BSR58的区别

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