BUXD87T4

高压NPN功率晶体管 HIGH VOLTAGE NPN POWER TRANSISTOR

- 双极 BJT - 单 NPN 20MHz 表面贴装型 DPAK

得捷:
TRANS NPN 450V 0.5A DPAK

立创商城:
NPN 450V 500mA

贸泽:
双极晶体管 - 双极结型晶体管BJT HIGH POWER NPN SILICON TRANSISTOR

艾睿:
This specially engineered NPN BUXD87T4 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 450V 0.5A 3-Pin2+Tab DPAK T/R

Chip1Stop:
Trans GP BJT NPN 450V 0.5A 3-Pin2+Tab DPAK T/R

Verical:
Trans GP BJT NPN 450V 0.5A 20000mW 3-Pin2+Tab DPAK T/R

儒卓力:
**NPN TRANSISTOR 1000V 0,5A TO252 **

DeviceMart:
TRANS NPN 450V 0.5A DPAK

Win Source:
TRANS NPN 450V 0.5A DPAK