射频放大器 SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Overview
The BGS8H2UK is a Low-Noise Amplifier LNA with bypass switch for LTE receiver applications, available in a Wafer Level Chip Scale Package WLCSP. This product is only used in an overmolded module.
The BGS8H2UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex FDD systems. To lower power consumption the receive signal strength is sufficient. The BGS8H2UK can be switched off to operate in bypass mode at a 1 μA current. The BGS8H2UK requires only one external matching inductor.
The BGS8H2UK is optimized for 2300 MHz to 2690 MHz.
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## Features
* Operating frequency from 2300 MHz to 2690 MHz
* Noise figure NF = 0.95 dB
* Gain 13 dB with single matching coil
* Bypass switch insertion loss of -2.2 dB
* High input 1 dB compression point of -1 dBm
* High in band IP3i of 3.5 dBm
* Supply voltage 1.5 V to 3.1 V
* Integrated supply decoupling capacitor
* Optimized performance at a supply current of 5.8 mA
* Bypass mode current consumption < 1 μA
* Integrated temperature stabilized bias for easy design
* Requires only one input matching inductor
* Input and output AC coupled
* ESD protection on all pins HBM > 2 kV
* Integrated matching for the output
* Available in a WLCSP 0.69 mm x 0.44 mm x 0.29 mm: SOT1445-1
* 180 GHz transit frequency - SiGe:C technology
* Moisture sensitivity level 1
## Target Applications
* LNA for LTE reception in smart phones
* Feature phones
* Tablet PCs
* RF front-end modules
## Features