Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AHXKSA1, 21 A, Vds=200 V, 3引脚 TO-220封装
SIPMOS® N 通道 MOSFET
得捷:
MOSFET N-CH 200V 21A TO220-3
欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AHXKSA1, 21 A, Vds=200 V, 3引脚 TO-220封装
艾睿:
Create an effective common drain amplifier using this BUZ30AHXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in enhancement mode.
富昌:
Single N-Channel 200 V 130 mOhm SIPMOS® Power Mosfet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 200V 21A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO220-3
Verical:
Trans MOSFET N-CH 200V 21A 3-Pin3+Tab TO-220 Tube
额定功率 125 W
针脚数 3
漏源极电阻 0.1 Ω
极性 N-CH
耗散功率 125 W
阈值电压 3 V
漏源极电压Vds 200 V
连续漏极电流Ids 21A
上升时间 70 ns
输入电容Ciss 1400pF @25VVds
下降时间 90 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10 mm
宽度 4.4 mm
高度 9.25 mm
封装 TO-220
产品生命周期 Active
包装方式 Tube
制造应用 Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters, Class D audio amplifiers
RoHS标准 RoHS Compliant
含铅标准 Lead Free