Infineon BC847CWH6327XTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:800, 250 MHz, 3引脚 SOT-323 SC-70封装
小信号 NPN ,
得捷:
TRANS NPN 45V 0.1A SOT323
欧时:
Infineon BC847CWH6327XTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:800, 250 MHz, 3引脚 SOT-323 SC-70封装
艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, Infineon Technologies&s; NPN BC847CWH6327XTSA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-323 T/R
Chip1Stop:
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-323 T/R
极性 NPN
耗散功率 250 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 2 mm
宽度 1.25 mm
高度 0.8 mm
封装 SOT-323-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 For AF input stages and driver applications
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC847CWH6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BC847CWH6778XTSA1 英飞凌 | 完全替代 | BC847CWH6327XTSA1和BC847CWH6778XTSA1的区别 |
BC 847CW B6327 英飞凌 | 完全替代 | BC847CWH6327XTSA1和BC 847CW B6327的区别 |
BC850CWE6327HTSA1 英飞凌 | 完全替代 | BC847CWH6327XTSA1和BC850CWE6327HTSA1的区别 |