BCW60BE6327HTSA1

Infineon BCW60BE6327HTSA1 , NPN 晶体管, 100 mA, Vce=32 V, HFE:20, 250 MHz, 3引脚 SOT-23封装

小信号 NPN ，

得捷:
TRANS NPN 32V 0.1A SOT23

欧时:
Infineon BCW60BE6327HTSA1 , NPN 晶体管, 100 mA, Vce=32 V, HFE:20, 250 MHz, 3引脚 SOT-23封装

艾睿:
Compared to other transistors, the NPN BCW60BE6327HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 32V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R