BCR116SH6327XTSA1

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BCR116SH6327XTSA1概述

BCR116 系列 NPN 50 V 100 mA 表面贴装 硅 数字 晶体管 - SOT-363-6

双电阻器双数字,


得捷:
TRANS 2NPN PREBIAS 0.25W SOT363


欧时:
Infineon BCR116SH6327XTSA1 双 NPN 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:0.1, 6引脚


艾睿:
If you are building a digital signal processing device, make sure to use Infineon Technologies&s; NPN BCR116SH6327XTSA1 digital transistor&s;s within your circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -65 °C to 150 °C.


安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R


Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R


Verical:
Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R


Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363


BCR116SH6327XTSA1中文资料参数规格
技术参数

极性 NPN

耗散功率 0.25 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 70 @5mA, 5V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 150 MHz

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SOT-363-6

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.8 mm

封装 SOT-363-6

物理参数

工作温度 -65℃ ~ 150℃

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

BCR116SH6327XTSA1引脚图与封装图
BCR116SH6327XTSA1引脚图
BCR116SH6327XTSA1封装图
BCR116SH6327XTSA1封装焊盘图
在线购买BCR116SH6327XTSA1
型号: BCR116SH6327XTSA1
描述:BCR116 系列 NPN 50 V 100 mA 表面贴装 硅 数字 晶体管 - SOT-363-6

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