INFINEON BSS306NH6327XTSA1 晶体管 双极预偏置/数字, BRT, SOT-23
OptiMOS™2 功率 MOSFET 系列
Infineon 得捷:
MOSFET N-CH 30V 2.3A SOT23-3
欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSS306NH6327XTSA1, 2.3 A, Vds=30 V, 3引脚 SOT-23封装
e络盟:
功率场效应管, MOSFET, BRT, N沟道, 30 V, 2.3 A, 0.044 ohm, SOT-23, 表面安装
艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSS306NH6327XTSA1 power MOSFET is for you. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Verical:
Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
Newark:
# INFINEON BSS306NH6327XTSA1 Bipolar Pre-Biased / Digital Transistor, BRT, SOT-23
额定功率 0.5 W
针脚数 3
漏源极电阻 0.044 Ω
极性 N-Channel
耗散功率 500 mW
阈值电压 1.6 V
漏源极电压Vds 30 V
连续漏极电流Ids 2.3A
上升时间 2.3 ns
输入电容Ciss 207pF @15VVds
下降时间 1.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 车用, Industrial, Communications & Networking, 电源管理, Onboard charger, Power Management, 通信与网络, Automotive, Motor Drive & Control, 电机驱动与控制, 消费电子产品, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17