BSS316NH6327XTSA1

INFINEON  BSS316NH6327XTSA1  晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V

OptiMOS™2 功率 MOSFET 系列

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N-CH 30V 1.4A SOT23-3

欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSS316NH6327XTSA1, 1.4 A, Vds=30 V, 3引脚 SOT-23封装

立创商城:
N沟道 30V 1.4A

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 1.4 A, 0.119 ohm, SOT-23, 表面安装

艾睿:
Make an effective common source amplifier using this BSS316NH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23

Verical:
Trans MOSFET N-CH 30V 1.4A Automotive 3-Pin SOT-23 T/R

Newark:
# INFINEON  BSS316NH6327XTSA1  MOSFET Transistor, N Channel, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V

Win Source:
MOSFET N-CH 30V 1.4A SOT23