BSC035N04LSGATMA1

INFINEON  BSC035N04LSGATMA1  晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0029 ohm, 10 V, 2 V

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC035N04LSGATMA1, 100 A, Vds=40 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 40V 21A/100A TDSON

贸泽:
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3

艾睿:
Create an effective common drain amplifier using this BSC035N04LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 40V 21A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 40V 21A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC035N04LSGATMA1  MOSFET Transistor, N Channel, 100 A, 40 V, 0.0029 ohm, 10 V, 2 V

Win Source:
MOSFET N-CH 40V 100A TDSON-8