BSC042N03MSGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC042N03MSGATMA1, 93 A, Vds=30 V, 8引脚 TDSON封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 17A/93A TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC042N03MSGATMA1, 93 A, Vds=30 V, 8引脚 TDSON封装

艾睿:
As an alternative to traditional transistors, the BSC042N03MSGATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R

罗切斯特:
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP

Win Source:
MOSFET N-CH 30V 93A TDSON-8