Infineon BCR133WH6327XTSA1 NPN 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 3引脚 SOT-323 SC-70封装
双电阻器数字,
Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。
得捷:
TRANS PREBIAS NPN 250MW SOT323-3
立创商城:
1个NPN-预偏置 100mA 50V
欧时:
Infineon BCR133WH6327XTSA1 NPN 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 3引脚 SOT-323 SC-70封装
艾睿:
If you are building a digital signal processing device, make sure to use Infineon Technologies&s; NPN BCR133WH6327XTSA1 digital transistor&s;s within your circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-323 T/R
Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R
Win Source:
TRANS PREBIAS NPN 250MW SOT323-3
极性 NPN
耗散功率 0.25 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 130 MHz
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 2 mm
宽度 1.25 mm
高度 0.8 mm
封装 SOT-323-3
工作温度 -65℃ ~ 150℃
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR133WH6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
PDTC114EE,115 恩智浦 | 功能相似 | BCR133WH6327XTSA1和PDTC114EE,115的区别 |
FJX3002RTF 飞兆/仙童 | 功能相似 | BCR133WH6327XTSA1和FJX3002RTF的区别 |
DDTC114EUA-7 美台 | 功能相似 | BCR133WH6327XTSA1和DDTC114EUA-7的区别 |