INFINEON BSO615CGHUMA1 双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
SIPMOS® N 和 P 通道 MOSFET
得捷:
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
欧时:
Infineon SIPMOS 系列 Si N/P沟道 MOSFET BSO615CGHUMA1, 2 A,3.1 A, Vds=60 V, 8引脚 DSO封装
艾睿:
Create an effective common drain amplifier using this BSO615CGHUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH/P-CH 60V 3.1A/2A 8-Pin DSO T/R
富昌:
N & P 沟道 ±60 V 0.11/0.3 Ω 15/13.5 nC SipMOS 小信号 晶体管 - DSO-8
TME:
Transistor: N/P-MOSFET; unipolar; 60/-60V; 3.1/-2A; 2W; PG-DSO-8
Verical:
Trans MOSFET N/P-CH 60V 3.1A/2A Automotive 8-Pin DSO T/R
Newark:
# INFINEON BSO615CGHUMA1 Dual MOSFET, N and P Channel, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
额定电流 3.10 A
额定功率 2 W
针脚数 8
漏源极电阻 0.07 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 1.6 V
输入电容 380 pF
栅电荷 22.5 nC
漏源极电压Vds 60 V
连续漏极电流Ids 2.00 A
输入电容Ciss 380pF @25VVds
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 PG-DSO-8
长度 5 mm
宽度 4 mm
高度 1.45 mm
封装 PG-DSO-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 车用, Onboard charger, 电机驱动与控制, Automotive, Power Management, 电源管理, Motor Drive & Control, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSO615CGHUMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
SQ1563AEH-T1_GE3 Vishay Siliconix | 功能相似 | BSO615CGHUMA1和SQ1563AEH-T1_GE3的区别 |