INFINEON BFP420FH6327XTSA1 晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, 60 hFE
射频双极，
得捷:
RF TRANS NPN 5.5V 25GHZ 4TSFP
欧时:
Infineon BFP420FH6327XTSA1 , NPN 晶体管, 60 mA, Vce=15 V, HFE:60, 4引脚 TSFP封装
贸泽:
射频RF双极晶体管 RF BIP TRANSISTOR
e络盟:
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, 60 hFE
艾睿:
Operating at higher RF frequencies has never been easier with this specially designed BFP420FH6327XTSA1 RF amplifier from Infineon Technologies. This RF transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans GP BJT NPN 4.5V 0.06A 4-Pin TSFP T/R
Verical:
Trans RF BJT NPN 4.5V 0.06A 210mW Automotive 4-Pin TSFP T/R
Newark:
# INFINEON BFP420FH6327XTSA1 Bipolar - RF Transistor, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, 60
Win Source:
TRANS RF NPN 5.5V 35MA 4TSFP
频率 25000 MHz
针脚数 4
极性 NPN
耗散功率 210 mW
输入电容 0.55 pF
击穿电压集电极-发射极 5.5 V
增益 19.5 dB
最小电流放大倍数hFE 60 @5mA, 4V
额定功率Max 160 mW
直流电流增益hFE 60
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 210 mW
安装方式 Surface Mount
引脚数 4
封装 TSFP-4
长度 1.4 mm
宽度 0.8 mm
高度 0.55 mm
封装 TSFP-4
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, ISM applications like RKE, AMR and Zigbee, As active device in discretes oscillators, 射频通信, As discrete active mixer in , Satellite communication systems: Navigation systems GPS, Glonass, satellite radio SDARs, DAB, Multimedia applications such as mobile/porta, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99