BC847PNH6727XTSA1

SOT-363 NPN+PNP 45V 0.1A

- 双极 BJT - 阵列 NPN，PNP 45V 100mA 250MHz 250mW 表面贴装型 PG-SOT363-6

得捷:
TRANS NPN/PNP 45V 0.1A SOT363-6

贸泽:
Bipolar Transistors - BJT AF TRANSISTORS

艾睿:
Infineon Technologies has the solution to your circuit&s;s high-voltage requirements with their npn and PNP BC847PNH6727XTSA1 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R