BSC0925ND

BSC0925ND图片1
BSC0925ND概述

30V,5mΩ,40A,双N沟道功率MOSFET

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

.
Ultra low gate and output charge
.
Lowest on-state resistance in small footprint packages
.
Easy to design in

Benefits:

.
Increased battery lifetime
.
Improved EMI behavior making external snubber networks obsolete
.
Saving costs
.
Saving space
.
Reducing power losses
BSC0925ND中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 30 V

连续漏极电流Ids 15A

封装参数

封装 TISON

外形尺寸

长度 5.9 mm

宽度 5.15 mm

高度 1.27 mm

封装 TISON

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Onboard charger, VRD/VRM, Mainboard

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BSC0925ND
型号: BSC0925ND
描述:30V,5mΩ,40A,双N沟道功率MOSFET

锐单商城 - 一站式电子元器件采购平台