BGB741L7ESD

BGB741L7ESD图片1
BGB741L7ESD图片2
BGB741L7ESD概述

ESD -强大和易于使用的宽带低噪声放大器MMIC ESD-Robust and Easy-To-Use Broadband LNA MMIC

Description:

The is a high performance low noise amplifier LNA MMIC based on ’s reliable high volume silicon germanium carbon SiGe:C bipolar technology. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge ESD and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package.

BGB741L7ESD中文资料参数规格
技术参数

增益 19.0 dB

工作温度Max 150 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 6

封装 TSLP-7-1

外形尺寸

封装 TSLP-7-1

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BGB741L7ESD
型号: BGB741L7ESD
制造商: Infineon 英飞凌
描述:ESD -强大和易于使用的宽带低噪声放大器MMIC ESD-Robust and Easy-To-Use Broadband LNA MMIC

锐单商城 - 一站式电子元器件采购平台