BF2030

BF2030 N沟道MOSFET 8V 10mA SOT-143 marking/标记 NE 低噪声增益控制放大器/VHF和UHF应用

最大源漏极电压Vds Drain-Source Voltage| 8V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 6V 最大漏极电流Id Drain Current| 10mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.3V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 描述与应用| 硅N沟道MOSFET四极管 •低噪声，高增益控制 高达1GHz的输入阶段 •工作电压5V

Win Source:
MOSFET N-CH 8V 40MA SOT-143