BCR133S

BCR133S 复合带阻尼NPN三极管 50V 0.1A R1=R2=10KΩ 130MHZ SOT363 代码 WC

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V 集电极连续输出电流IC Collector CurrentIC | 100MA/0.1A Q1基极输入电阻R1 Input ResistanceR1 | 10KΩ Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 10KΩ Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 10KΩ Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 10KΩ Q2电阻比R1/R2 Q2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE | 30 截止频率fT Transtion FrequencyfT | 130MHZ 耗散功率Pc Power Dissipation | 250MW/0.25W Description & Applications

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NPN Silicon Digital Transistor * Switching in circuit, inverter, interface circuit, drive circuit * Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 描述与应用 | * NPN硅数字晶体管 * 开关电路，逆变器，接口电路，驱动电路 * 内置偏置电阻（R1=10kΩ的，R2=10kΩ的）