BCW61 PNP三极管 -32V -100mA/-0.1A 250MHz 120~630 -200mV/-0.2V SOT-23/SC-59 marking/标记 SB1 驱动器
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| −32V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −32V 集电极连续输出电流ICCollector CurrentIC| −100mA/-0.1A 截止频率fTTranstion FrequencyfT| 250MHz 直流电流增益hFEDC Current GainhFE| 120~630 管压降VCE(sat)Collector-Emitter SaturationVoltage| −200mV/-0.2V 耗散功率PcPoWer Dissipation| 330mW/0.33W Description & Applications| PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free RoHS compliant package1 • Qualified according AEC Q101 描述与应用| PNP硅晶体管自动对焦 •对于AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压 •低噪音之间30 Hz和15千赫 •互补类型:BCW60,BCX70(NPN) •无铅(符合RoHS)包1) •符合AEC Q101
封装 SOT-23
封装 SOT-23
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO −32V
集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO −32V
集电极连续输出电流ICCollector CurrentIC −100mA/-0.1A
截止频率fTTranstion FrequencyfT 250MHz
直流电流增益hFEDC Current GainhFE 120~630
管压降VCE(sat)Collector-Emitter SaturationVoltage −200mV/-0.2V
耗散功率PcPoWer Dissipation 330mW/0.33W
规格书PDF __
RoHS标准 RoHS Compliant
含铅标准 Lead Free