BF1204

双N沟道双栅MOS -FET Dual N-channel dual gate MOS-FET

DESCRIPTION

The is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.

FEATURES

• Two low noise gain controlled amplifiers in a single package

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance ratio.

APPLICATIONS

•  Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.