BF1108R

BF1108R N沟道MOSFET 3V 10mA SOT-143 marking/标记 NH 低传导损耗/低开关损耗

General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B BF1108 or SOT143R package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Features Specially designed for low loss RF switching up to 1 GHz Applications Various RF switching applications such as:Passive loop through for VCR tuner、Transceiver switching