BLF647

UHF功率LDMOS晶体管 UHF power LDMOS transistor

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing common mode inductance

• Designed for broadband operation HF to 800 MHz

• Internal input damping for excellent stability over the whole frequency range.

APPLICATIONS

• Communication transmitter applications in the HF to 800 MHz frequency range.