MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M
Description:
With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.
Available in halfbridge configuration power stage 5x6
Summary of Features:
Benefits:
通道数 1
漏源极电阻 3.3 mΩ
耗散功率 2.5 W
阈值电压 1 V
漏源击穿电压 30 V
上升时间 9 ns
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
安装方式 Surface Mount
封装 SO-8
长度 4.9 mm
宽度 3.9 mm
高度 1.75 mm
封装 SO-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 VRD/VRM, Onboard charger, Mainboard
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99