BF1202WR

BF1202WR N沟道MOSFET 10V 30mA SOT-343/SC70-4 marking/标记 LE 电压控制小信号开关/高饱和电流能力

N-channel dual-gate MOS-FETs VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment. FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 3V to9 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.