BFR740L3RH

BFR740L3RH NPN三极管 13V 30mA 42Ghz 160~400 TSLP-3-9 marking/标记 R9 高增益超低噪声RF晶体管

Description:

The is a very low noise wideband NPN RF transistor. The device is based on ’s reliable high volume silicon germanium carbon SiGe:C heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of 42 GHz and is suited for low voltage applications VCEO,max = 4 V from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules.

Summary of Features:

.

Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at

.

5.5 GHz, 3 V, 6 mA

.

High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V

.

Very thin small leadless package height only 0.31 mm, hence ideal for modules with compact size and low profile height

.

Pb-free RoHS compliant and halogen-free package

.

Qualification report according to AEC-Q101 available