BFY450P

RF Bipolar Transistors HiRel NPN Silicon RF Transistor

Summary of Features:

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HiRel Discrete and Microwave Semiconductor

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For Medium Power Amplifiers

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Compression Point P-1dB =19dBm 1.8 GHz

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Max. Available Gain Gma = 16dB at 1.8 GHz

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Hermetically sealed microwave package

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Transition Frequency fT = 20 GHz

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SIEGET® 25-Line Technologies Grounded Emitter Transistor-25 GHz fT-Line  

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Type Variant No. 03

Target Applications:

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Quality level for Engineering Models