BUK127-50DL

BUK127-50DL概述

BUK127-50DL N沟道MOSFET 50V 3mA SOT-223/SC-73/TO261-4 marking/标记 127DL 增强模式/逻辑电平

PowerMOS transistor Logic level TOPFET Vertical power DMOS output stage Overload protected up to 85˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads


BUK127-50DL中文资料参数规格
封装参数

封装 SOT-223

外形尺寸

封装 SOT-223

其他

最大源漏极电压Vds Drain-Source Voltage 50V

最大漏极电流Id Drain Current 3mA

源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 0.2Ω/Ohm @100mA,5V

开启电压Vgs(th) Gate-Source Threshold Voltage 1.7V-3.7V

耗散功率Pd Power Dissipation 1.8W

规格书PDF __

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买BUK127-50DL
型号: BUK127-50DL
制造商: NXP 恩智浦
描述:BUK127-50DL N沟道MOSFET 50V 3mA SOT-223/SC-73/TO261-4 marking/标记 127DL 增强模式/逻辑电平
替代型号BUK127-50DL
型号/品牌 代替类型 替代型号对比

BUK127-50DL

NXP 恩智浦

当前型号

当前型号

BUK127-50DL,115

恩智浦

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