BSH201

BSH201 P沟道MOS场效应管 -60V -300mA 2.1ohm SOT-23 marking/标记 WJ6 低开启电压 快速开关

最大源漏极电压VdsDrain-Source Voltage| -60V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -0.3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 2.1Ω @-160mA,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1V 耗散功率PdPower Dissipation| 417mW/0.417W Description & Applications| Simple Drive Requirement Small Package Outline Surface Mount Device 描述与应用| 简单的驱动要求 小封装 表面贴装设备

贸泽:
NXP Semiconductors

Win Source:
P-channel enhancement mode MOS transistor