BUK7510-55AL

BUK7510-55AL图片1
BUK7510-55AL图片2
BUK7510-55AL概述

N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET

General description

Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

■ Q101 compliant

■ Suitable for thermally demanding environments due to 175 °C rating

■ Suitable for use in control systems due to stable operation in linear mode

Applications

■ 12 V and 24 V loads

■ Automotive systems

■ DC motor control

■ Repetitive clamped inductive switching

BUK7510-55AL中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 55 V

连续漏极电流Ids 122A

封装参数

安装方式 Through Hole

封装 TO-220

外形尺寸

封装 TO-220

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BUK7510-55AL
型号: BUK7510-55AL
制造商: NXP 恩智浦
描述:N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
替代型号BUK7510-55AL
型号/品牌 代替类型 替代型号对比

BUK7510-55AL

NXP 恩智浦

当前型号

当前型号

PSMN015-100P,127

安世

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BUK7510-100B

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BUK7510-55AL和BUK7510-100B的区别

BUK7515-100A,127

恩智浦

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